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2024年12月29日发(作者：即时通讯app源码)

专利内容由知识产权出版社提供

专利名称：METHOD OF MANUFACTURE OF A MULTI-

LAYERED SUBSTRATE WITH A THIN SINGLE

CRYSTALLINE LAYER

发明人：WILLIAM CARR,ALEXANDER USENKO

申请号：AU2002356823

申请日：20021018

公开号：AU2002356823A1

公开日：20040209

摘要：A process for producing a multilayered substrate. In a first step, an adhesive

layer is applied to a surface of a support substrate. Then a device substrate is placed into

contact with the adhesive surface. Then the adhesive is cured. Then the device substrate is

thinned. The device substrate has a hydrogen trap layer inside. The trap layer is formed

by ion implantation through a face surface of the device substrate. The adhesive is chosen

from compounds that release hydrogen upon curing. Thinning of the device substrate is

performed by cleavage along a fragile layer of hydrogen microbubbles. The microbubble

layer is formed through gettering of hydrogen released from the adhesive layer upon

curing onto the trap layer and evolving the trapped hydrogen into the microbubbles. The

substrates are preferably silicon single crystalline wafers and the adhesive is preferably

hydrogen-silsesquioxane. The process is preferentially used to manufacture silicon-on-

adhesive wafers for microelectromechanical systems, multilayer CMOS, and

optoelectronic applications. The layered wafers have one or more thin single crystalline

device layers and one or more sacrificial/spacer layer.

申请人：CARR, WILLIAM,USENKO, ALEXANDER

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