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2024年12月29日发(作者：selenium如何定位动态元素)

专利内容由知识产权出版社提供

专利名称：THICK FILM MULTILAYER CIRCUIT

SUBSTRATE

发明人：NAKAMURA HISASHI

申请号：JP3877684

申请日：19840302

公开号：JPS60183761A

公开日：19850919

摘要：PURPOSE:To obtain a thick film resistor layer having superior precision of a

resistance value by a method wherein a resistance circuit consisting of a thick film circuit

conductor layer and a thick film resistor layer is provided on the main surface on one side

of a ceramic insulating substrate, and a multilayer circuit formed by laminating

alternately with a thick film circuit conductor layer and a glass insulator layer provided

with via holes is provided on the main surface on another side. CONSTITUTION:A metal

glaze thick film circuit conductor layer 9a consisting of silver or silver-palladium is formed

on the main surface on one side of a ceramic insulating substrate 7 such as alumina, etc.,

and a thick film resistor layer 10 consisting of ruthenium oxide is formed on the same

surface according to printing, high temperature baking of paste. Metal glaze thick film

circuit conductor layer 9b, 9c, 9d, and insulator layers 11a, 11b mainly consisting of glass

are laminated alternately on the main surface on another side of the ceramic insulating

substrate 7, and conducting parts 12a, 12b to connect mutually respectively the

interlayer circuit conductor layers 9b, 9c, 9d through via holes provided to the glass

insulator layers 11a, 11b are formed. Moreover a conductor is filled up in penetrating

holes provided to the ceramic insulating substrate 7 to form through holes 8, and the

thick film resistance circuit and the thick film circuit conductor layers of the respective

layers are connected electrically.

申请人：MATSUSHITA DENKI SANGYO KK

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