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2024年12月29日发(作者：mysql是什么表示关系)
专利内容由知识产权出版社提供
专利名称：THICK-FILM SUBSTRATE BAKED IN
NITROGEN ATMOSPHERE
发明人：NAKANO KATSUHIRO
申请号：JP2493590
申请日：19900202
公开号：JPH03229483A
公开日：19911011
摘要：PURPOSE:To enable correction of a resistance value of a thick-film resistor even
when the resistance value of the thick-film resistor is higher than an aimed final resistance
value, by providing an electrode for resistance value correction so that it is in contact with
an electrode and the thick-film resistor baked in a nitrogen atmosphere.
CONSTITUTION:After an electrode 1 is formed on an alumina base 6, a thick-film resistor
2 is formed so that it is in contact with a part of the electrode 1. After the formation of
the thick-film resistor 2, subsequently, an electrode 3 for resistance value correction is
formed so that it is in contact with a part of the electrode 1 and a part of the thick-film
resistor 2. On the occasion, the electrode 3 for resistance value correction is formed so
that the end face 3a thereof being in contact only with the thick-film resistor 2 is located
at a position standing out toward the center of the thick-film resistor 2 from the end face
2b of contact of the thick-film resistor 2 with the electrode 1. Besides, the electrode 3 for
resistance value correction is formed of a thick-film conductor baked in a nitrogen
atmosphere, of which the heat treatment temperature is lower than the baking
temperature of the thick-film resistor 2, so as to prevent occurrence of a change in the
crystal structure of a material forming the thick-film resistor 2, due to sintering, and a
consequent change in the resistance value of the thick-film resistor 2.
申请人：MATSUSHITA ELECTRIC IND CO LTD
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