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2024年12月28日发(作者：android studio最新版安装教程)

专利内容由知识产权出版社提供

专利名称：FLASH MEMORY WITH TREATED CHARGE

TRAP LAYER

发明人：Mihaela Balseanu,Vladimir Zubkov,Li-Qun

Xia,Atif Noori,Reza Arghavani,Derek R.

Witty,Amir Al-Bayati

申请号：US12256173

申请日：20081022

公开号：US2A1

公开日：20100422

专利附图：

摘要：A methods of forming a flash memory device are provided. The flash memory

device comprises a silicon dioxide layer on a substrate and a silicon nitride layer that is

formed on the silicon dioxide layer. The properties of the silicon nitride layer can be

modified by any of: exposing the silicon nitride layer to ultraviolet radiation, exposing the

silicon nitride layer to an electron beam, and by plasma treating the silicon nitride layer. A

dielectric material is deposited on the silicon nitride layer and a conductive date is

formed over the dielectric material. The flash memory device with modified silicon nitride

layer provides an increase in charge holding capacity and charge retention time of the

unit cell of a non-volatile memory device.

申请人：Mihaela Balseanu,Vladimir Zubkov,Li-Qun Xia,Atif Noori,Reza Arghavani,Derek

R. Witty,Amir Al-Bayati

地址：Sunnyvale CA US,Mountain View CA US,Cupertino CA US,Saratoga CA US,Scotts

Valley CA US,Fremont CA US,San Jose CA US

国籍：US,US,US,US,US,US,US

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