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2024年12月29日发(作者：用手快还是实战快)

专利内容由知识产权出版社提供

专利名称：PLASMA DEVICE

发明人：MANABE YOSHIO,MITSUYU

TSUNEO,YAMAZAKI OSAMU

申请号：JP4655986

申请日：19860304

公开号：JPS62205282A

公开日：19870909

摘要：PURPOSE:To form a good-quality film with simple constitution by disposing a

substrate into a plasma chamber by a microwave and magnetic field and making the

intensity distribution of the magnetic field low near the substrate and high in the position

apart from the substrate. CONSTITUTION:The substrate 2 is disposed via a substrate

holder 3 into the plasma chamber 1 in which plasma is induced by the microwave and

magnetic field. A gas for CVD is then introduced into the chamber. The above-mentioned

magnetic field is impressed approximately parallel with the substrate 2 by hole pieces 8

disposed on the outside of the plasma chamber 1. The intensity distribution thereof is

made low near the substrate 2 and high in the position apart therefrom. The direction

contact of the plasma with the substrate 2 is thereby obviated and the ions and free

radicals are transported to the substrate 2, by which the dense and good-quality film is

formed. The intensity of the magnetic field in the position apart from the substrate 2 in

the above-mentioned method is preferably adjusted to the intensity at which electron

cyclotron resonance arises or above at least at one point to efficiently generate the ions

and free radicals.

申请人：MATSUSHITA ELECTRIC IND CO LTD

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