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2024年12月27日发(作者：微服务和容器的关系)

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专利名称：Deep trench capacitor through SOI

substrate and methods of forming

发明人：Herbert L. Ho,Kangguo Cheng,Yoichi

Otani,Kevin R. Winstel

申请号：US11470809

申请日：20060907

公开号：US07575970B2

公开日：20090818

专利附图：

摘要：Methods of forming a deep trench capacitor through an SOI substrate, and a

capacitor are disclosed. In one embodiment, a method includes forming a trench opening

into the SOI substrate to the silicon substrate; depositing a sidewall spacer in the trench

opening; etching to form the deep trench into the silicon substrate; forming a first

electrode by implanting a dopant into the silicon substrate, whereby the sidewall spacer

protects the BOX layer and the silicon layer; removing the sidewall spacer; depositing a

node dielectric within the deep trench; and forming a second electrode by depositing a

conductor in the deep trench. Implanting creates a substantially uniform depth doped

region except at a portion adjacent to a lowermost portion of the deep trench, which may

be substantially bulbous. The BOX layer is protected from undercutting by the sidewall

spacer, and the implantation removes the need for out-diffusing dopant from silica glass.

申请人：Herbert L. Ho,Kangguo Cheng,Yoichi Otani,Kevin R. Winstel

地址：New Windsor NY US,Beacon NY US,Bargen BE CH,Poughkeepsie NY US

国籍：US,US,CH,US

代理机构：Hoffman Warnick LLC

代理人：Todd M. C. Li

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