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2024年12月28日发(作者：commandments)
专利内容由知识产权出版社提供
专利名称：BPSG REFLOW METHOD
发明人：XIA, Li-Qun,CONTI, Richard A.,GALIANO,
Maria,YIEH, Ellie
申请号：EP99959078.9
申请日：19991122
公开号：EP1142006A1
公开日：20011010
摘要：A multistep method for planarizing a silicon oxide insulating layer such as a
deposited borophosphosilicate glass (BPSG) layer. The method includes several different
planarization stages. During an initial, pre-planarization stage, a substrate having a BPSG
layer deposited over it is loaded into a substrate processing chamber. Then, during a first
planarization stage after the pre-planarization stage, oxygen and hydrogen are flowed
into the substrate processing chamber to form a steam ambient in said chamber and the
substrate is heated in the steam ambient from a first temperature to a second
temperature. The first temperature is below a reflow temperature of the BPSG layer and
the second temperature is sufficient to reflow the layer. After the substrate is heated to
the second temperature during a second planarization stage, the temperature of the
substrate and the conditions within the substrate processing chamber are maintained at
conditions sufficient to reflow the BPSG layer in the steam ambient. In a more preferred
embodiment, the multistep planarization method also includes a third planarization
stage, after the second stage. In the third planarization stage, the flow of hydrogen is
stopped while the flow of oxygen is maintained, thereby forming an oxygen ambient in
the substrate processing chamber. The substrate temperature is maintained in the
oxygen ambient at a temperature above the reflow temperature of the BPSG layer. It is
believed that this additional step minimizes the amount of moisture incorporated into
the reflowed BPSG layer.
申请人：Applied Materials, Inc.,International Business Machines
地址：3050 Bowers Avenue,P.O. Box 450A Santa Clara,California 95052 US,IBM East
Fishkill Facility Dept. 18GA, 300-482 Hopewell JunctionNew York 12533-6531 US
国籍：US,US
代理机构：Bayliss, Geoffrey Cyril
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