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2024年12月27日发(作者：linux服务器查看时间)
半导体光罩工艺流程
英文回答：
Semiconductor Photomask Process Flow.
The semiconductor photomask process flow involves a
series of critical steps used to create the masks that are
essential for transferring patterns onto semiconductor
wafers during the fabrication process. Here is a general
overview of the key steps:
1. Substrate preparation: The starting point is a
transparent substrate, typically made of quartz or glass.
It is cleaned and coated with a thin layer of chromium or
other conductive material to create a reflective surface.
2. Photoresist application: A photoresist, which is a
light-sensitive material, is applied to the substrate by
spin coating or lamination. It is then baked to remove any
solvents and ensure proper adhesion.
3. Exposure: The photoresist-coated substrate is
exposed to ultraviolet (UV) light through a mask containing
the desired circuit patterns. The exposed areas of the
photoresist undergo a chemical reaction and become hardened.
4. Development: The exposed substrate is immersed in a
developer solution, which removes the unexposed portions of
the photoresist. This creates a patterned resist mask on
the substrate.
5. Etching: The substrate is then etched using a plasma
or wet etching process to transfer the resist pattern into
the underlying conductive layer. This creates the desired
circuit features on the substrate.
6. Stripping: The remaining photoresist is removed
using a stripper solution, leaving behind the patterned
conductive layer.
7. Inspection: The mask is inspected to ensure that the
desired patterns have been accurately transferred.
8. Metrology: The mask is measured to verify its
critical dimensions and ensure that it meets the required
specifications.
The semiconductor photomask process flow is a complex
and precise sequence of steps that requires specialized
equipment and expertise. It is essential for producing
high-quality masks that are used in the fabrication of
advanced semiconductor devices.
中文回答：
半导体光罩工艺流程。
半导体光罩工艺流程涉及一系列关键步骤，用于制造在制造过
程中将图案转移到半导体晶圆上至关重要的掩模。以下是关键步骤
的概述：
1. 基板准备，起点是透明基板，通常由石英或玻璃制成。将其
清洁并涂上一层薄薄的铬或其他导电材料以创建反射表面。
2. 光刻胶涂布，通过旋涂或层压将光刻胶（一种感光材料）施
加到基板上。然后将其烘烤以去除任何溶剂并确保适当粘合。
3. 曝光，通过包含所需电路图案的掩模，将涂有光刻胶的基板
暴露在紫外线 (UV) 下。光刻胶的曝光区域发生化学反应并变硬。
4. 显影，将曝光的基板浸入显影液中，去除未曝光部分的光刻
胶。这在基板上创建了一个图案化的抗蚀剂掩模。
5. 刻蚀，然后使用等离子体或湿法刻蚀工艺对基板进行刻蚀，
以将抗蚀剂图案转移到下面的导电层。这在基板上创建所需的电路
特征。
6. 剥离: 使用剥离剂去除剩余的光刻胶，留下图案化的导电层。
7. 检查，检查掩模以确保已准确转移所需的图案。
8. 计量，对掩模进行测量以验证其临界尺寸并确保其符合要求
的规格。
半导体光罩工艺流程是一个复杂且精密的步骤序列，需要专门
的设备和专业知识。这对于生产用于制造先进半导体器件的高质量
掩模至关重要。
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