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2024年12月28日发(作者：解释命名空间和类的关系)

专利内容由知识产权出版社提供

专利名称：GaN SUBSTRATE, SUBSTRATE WITH

EPITAXIAL LAYER, SEMICONDUCTOR

DEVICE, AND METHOD OF

MANUFACTURING GaN SUBSTRATE

发明人：Hideki OSADA,Hitoshi Kasai,Keiji

Ishibashi,Seiji Nakahata,Takashi

Kyono,Katsushi Akita,Yoshiki Miura

申请号：US12137038

申请日：20080611

公开号：US2A1

公开日：20081218

专利附图：

摘要：A GaN substrate having a large diameter of two inches or more by which a

semiconductor device such as a light emitting element with improved characteristics such

as luminance efficiency, an operating life and the like can be obtained at low cost

industrially, a substrate having an epitaxial layer formed on the GaN substrate, a

semiconductor device, and a method of manufacturing the GaN substrate are provided. A

GaN substrate has a main surface and contains a low-defect crystal region and a defect

concentrated region adjacent to low-defect crystal region. Low-defect crystal region and

defect concentrated region extend from the main surface to a back surface positioned on

the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle

direction with respect to a normal vector of the main surface.

申请人：Hideki OSADA,Hitoshi Kasai,Keiji Ishibashi,Seiji Nakahata,Takashi

Kyono,Katsushi Akita,Yoshiki Miura

地址：Itami-shi JP,Itami-shi JP,Itami-shi JP,Hyogo JP,Itami-shi JP,Itami-shi JP,Itami-shi JP

国籍：JP,JP,JP,JP,JP,JP,JP

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