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2024年12月28日发(作者：row%0 column%1什么意思)

专利内容由知识产权出版社提供

专利名称：Semiconductor structure having more

usable substrate area and method for

forming same

发明人：Darwin A. Clampitt

申请号：US09613003

申请日：20000710

公开号：US06403430B1

公开日：20020611

专利附图：

摘要：A semiconductor structure includes a first substrate portion having a surface

and a first active region disposed in the first substrate portion. An insulator region is

disposed on the first substrate portion outside of the first active region and extends out

from the surface. A second substrate portion is disposed on the insulator region, and a

second active region is disposed in the second substrate portion. Thus, by disposing a

portion of the substrate on the isolation region, the usable substrate area is dramatically

increased.

申请人：MICRON TECHNOLOGY, INC.

代理机构：Dorsey & Whitney LLP

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