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2024年12月28日发(作者：程序员学什么语言)

专利内容由知识产权出版社提供

专利名称：Method for forming a relaxed or pseudo-

relaxed useful layer on a substrate

发明人：Bruno Ghyselen

申请号：US11181414

申请日：20050713

公开号：US07348260B2

公开日：20080325

专利附图：

摘要：A method for forming a relaxed or pseudo-relaxed useful layer on a substrate

is described. The method includes growing a strained semiconductor layer on a donor

substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous

layer of a material that becomes viscous above a certain viscosity temperature to form a

first structure. The method further includes detaching the donor substrate from the first

structure to form a second structure comprising the receiver substrate, the vitreous

layer, and the strained layer, and then heat treating the second structure at a

temperature and time sufficient to relax strains in the strained semiconductor layer and

to form a relaxed or pseudo-relaxed useful layer on the receiver substrate.

申请人：Bruno Ghyselen

地址：Seyssinet-Pariset FR

国籍：FR

代理机构：Winston & Strawn LLP

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