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2024年12月28日发(作者:反乌托邦游戏漫画免费全集)

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专利名称:CATHODE SUBSTRATE HAVING CATHODE

ELECTRODE LAYER, INSULATOR LAYER, AND

GATE ELECTRODE LAYER FORMED THEREON

发明人:Haruhisa NAKANO,Masaaki Hirakawa,Osamu

Miura,Hirohiko Murakami,Kensuke

Okasaka,Tomoaki Kojima

申请号:US12538354

申请日:20090810

公开号:US2A1

公开日:20091231

专利附图:

摘要:A cathode substrate according to the present invention comprises a cathode

electrode layer (), insulator layer () and gate electrode layer () formed sequentially on a

substrate to be processed (). The insulator layer includes a hole () formed therethrough.

A gate aperture () is formed through the gate electrode layer. An emitter (E) is then

provided at the bottom of the hole (). In this case, the gate aperture comprises a plurality

of openings (), the total area of which is smaller than the area of top opening of the hole

in the insulator layer. The openings are arranged densely at a position opposite to the

emitter and just above the hole of the insulator layer.

申请人:Haruhisa NAKANO,Masaaki Hirakawa,Osamu Miura,Hirohiko

Murakami,Kensuke Okasaka,Tomoaki Kojima

地址:Tsukuba-shi JP,Tsukuba-shi JP,Tsukuba-shi JP,Tsukuba-shi JP,Chicibu-shi

JP,Saitama-ken JP

国籍:JP,JP,JP,JP,JP,JP

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