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2024年12月27日发(作者：cancel的意思)

专利内容由知识产权出版社提供

专利名称：Method of making the selection gate in a

split-gate flash eeprom cell and its structure

发明人：Wen-Ting Chu,Jack Yeh,Chrong-Jung Lin

申请号：US10355134

申请日：20030131

公开号：US2A1

公开日：20030821

专利附图：

摘要：A method of making the selection gate in a split-gate flash EEPROM cell forms

a selection gate on a trench sidewall of a semiconductor substrate to minimize the

sidewise dimension of the selection gate and to maintain the channel length. The

disclosed method includes the steps of: forming a trench on a semiconductor substrate

on one side of a suspending gate structure; forming an inter polysilicon dielectric layer

on the sidewall of the suspending gate structure and the trench; and forming a

polysilicon spacer on the inter polysilicon dielectric layer as the selection gate. Such a

split-gate flash EEPROM cell can produce ballistic hot electrons, improving the data

writing efficiency and lowering the writing voltage.

申请人：CHU WEN-TING,YEH JACK,LIN CHRONG-JUNG

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