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2024年12月28日发(作者：如何制作网页投票)

专利内容由知识产权出版社提供

专利名称：Substrate treatment manner and substrate

central processing unit

发明人：白石 雅敏,中間 将次

申请号：JP2003072292

申请日：20030317

公开号：JP4124448B2

公开日：20080723

摘要：

PROBLEM TO BE SOLVED: To improve the uniformity in a remaining film at a portion

subjected to half-exposure.

SOLUTION: A substrate G is actually heat treated in a treatment chamber 42. The

treatment chamber 42 has an upper stage plate 45 for heating a resist R from the

surface of the substrate G, a lower stage plate 46 for heating the resist R from the rear

surface of the substrate G, and an exhaust vent 47 for exhausting the gas in the

treatment chamber 42. The upper stage plate 45 is provided while an upper air cylinder

51 for composing an upper drive mechanism 43 allows the upper stage plate 45 to rise

and fall in a vertical direction in the treatment chamber 42. The lower stage plate 46 is

placed on a floor 42b in the treatment chamber 42. The exhaust vent 47 is connected to a

pump 50 via piping 48. The heating temperature and time by the upper and lower stage

plates 45, 46 are controlled by a heating control unit 70. Air pressure in the treatment

chamber 42 is controlled by controlling the pump 50 with an air pressure control unit 73.

COPYRIGHT: (C)2005,JPO&NCIPI

申请人：東京エレクトロン株式会社

地址：東京都港区赤坂五丁目３番１号

国籍：JP

代理人：大森 純一

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