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2024年12月28日发(作者：html文件怎么打开华为手机)

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专利名称：INSULATED GATE TYPE FIELD-EFFECT

TRANSISTOR

发明人：KUMASHIRO SHIGETAKA

申请号：JP11712185

申请日：19850530

公开号：JPS61276265A

公开日：19861206

摘要：PURPOSE:To inhibit the generation of impact ionization of an insulated gate

type field-effect transistor and the generation of a parasitic bipolar effect with the

generation of the impact ionization by constituting a section between a source and a

drain and a section between a drain and a substrate by a semiconductor having

predetermined forbidden band width and electron affinity. CONSTITUTION:A P-type

semiconductor is used as a substrate 1 while a semiconductor having forbidden band

width smaller than the substrate 1 and electron affinity larger than the substrate is

employed as a source 2 and a semiconductor having forbidden band width larger than

the substrate 1 and electron affinity smaller than the substrate is used as a drain 3, and

high-concentration N-type regions are constituted. On the other hand, a region 4

connecting the substrate 1 and the drain 3 is composed of a semiconductor, forbidden

band width of which changes continuously and monotonously. The combination of

substances such as Ga0.28IN0.72P0.4As0.6 as the substrate 1, substances such as

Ga0.47IN0.53As as the source 2 section, substances such as InP as the drain 3 section and

substances such as GaxIn1-xPyAs1-y(0<=x<=0.28,0<=y<=0.4,y=1.429x) is possible as said

each semiconductor, and these semiconductors are formed through a method such as a

selective epitaxial growth method.

申请人：NEC CORP

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