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DMN6075S-7
I
D
Max
T
A
= +25°C
2.5A
2.0A
DMN6075S
Features and Benefits
N MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Summary
BV
DSS
60V
R
DS(ON)
Max
85mΩ @ V
GS
= 10V
120mΩ @ V
GS
= 4.5V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.008 grams (Approximate)
Applications
SOT23
DC-DC Converters
Power Management Functions
Backlighting
D
D
G
G
S
S
Top View
Top View
Top View
Pin Configuration
Ordering Information
(Note 4)
Product
DMN6075S-7
DMN6075S-13
Notes:
Reel Size (inches)
7
13
Tape Width (mm)
8
8
Quantity per Reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See /quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at /design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year 2014
Code
B
SOT23
S67 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: F = 2018)
M = Month (ex: 9 = September)
S67
~
~
Jan
1
Feb
2
2017
E
Mar
3
Y
M
2018
F
Apr
4
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
2022
J
Aug
8
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
May 2018
Month
Code
DMN6075S
Document number: DS37023 Rev. 6 - 2
1 of 7
© Diodes Incorporated
DMN6075S
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Value
60
±20
2.0
1.5
2.5
2.0
2.0
12
Unit
V
V
A
A
A
A
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady State
T
A
= +25°C
T
A
= +70°C
Steady State
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Value
0.8
0.5
157
1.15
0.7
110
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
60
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
69
75
—
606
32.6
24.6
1.5
12.3
5.6
1.7
1.9
3.5
4.1
35
11
Max
—
1.0
±100
3
85
120
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3.2A
V
GS
= 4.5V, I
D
= 2.8A
V
GS
= 0V, I
S
= 2.5A
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 30V, I
D
= 3A
V
GS
= 10V, V
DS
= 30V,
R
g
= 20Ω, R
L
= 50Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN6075S
Document number: DS37023 Rev. 6 - 2
2 of 7
May 2018
© Diodes Incorporated
15.0
V
GS
= 10V
V
GS
= 4.0V
DMN6075S
10
V = 5.0V
DS
12.0
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
9.0
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
V
GS
=5.0V
V
GS
= 3.5V
6.0
V
GS
= 3.0V
3.0
V
GS
= 2.5V
)
A
(
T
N
E
6
R
R
U
C
N
I
4
A
R
D
,
D
I
2
8
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.0
0234
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
15
R
D
S
(
O
N
)
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
R
D
S
(
O
N
)
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
0.15
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
0.2
I
D
= 3.2A
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
I
D
= 2.8A
0.12
0.09
V
GS
= 4.5V
0.06
V
GS
= 10V
0.03
0
036912
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
15
24681012141618
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
2.4
R
D
S
(
O
N
)
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
0.2
)
(
E
C
N
A
T
S
0.15
I
S
E
R
-
N
O
E
0.1
C
R
U
O
S
-
N
I
A
R
0.05
D
,
)
N
V = 10V
GS
T = 150°C
A
T = 125°C
A
R
D
S
(
O
N
)
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
2
T = 85°C
A
V
GS
= 10V
I
D
= 5A
1.6
V
GS
= 4.5V
I
D
= 3A
T = 25°C
A
T = -55°C
A
1.2
0.8
R
O
(
S
D
0
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.4
-50-255150
T
J
, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
3 of 7
May 2018
© Diodes Incorporated
DMN6075S
Document number: DS37023 Rev. 6 - 2
R
D
S
(
O
N
)
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DMN6075S
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
-50-255150
T
J
, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= 10V
I
D
= 5A
V
GS
= 4.5V
I
D
= 3A
2.5
V
G
S
(
T
H
)
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
)
V
(
E
G
A
T
2
L
O
V
D
L
O
H
S
1.5
E
R
H
T
E
T
A
G
1
,
)
h
I = 1mA
D
I = 250µA
D
V
t
(
S
G
0.5
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C )
J
Figure 8 Gate Threshold Variation vs. Junction Temperature
10
10000
f = 1MHz
)
A
(
T
N
E
R
R
U
C
E
C
R
U
O
S
,
S
I
I
S
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
8
C
T
,
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
1000
C
iss
6
T = 150°C
A
T =125°C
A
T = 25°C
A
4
100
C
oss
C
rss
2
T =85°C
A
T = -55°C
A
10
0
0
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
0.3
0.6
0.9
1.2
1.5
1
0102030
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
R
DS(ON)
Limited
40
10
100
V
V
G
T
E
T
R
E
S
H
O
L
D
V
L
O
L
T
G
A
G
(
)
V
(
V
E
E
E
S
C
A
E
H
R
T
T
U
A
O
O
G
,
A
V
)
S
G
G
S
9
8
7
6
5
4
3
2
1
0
024681012
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
14
V
DS
= 30V
I
D
= 3A
10
)
A
(
T
N
1
E
R
R
U
C
N
0.1
I
A
R
D
,
D
I
0.01
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
T = 150°C
J(MAX)
P = 100µs
W
T = 25°C
A
V = 10V
GS
Single Pulse
DUT on 1 * MRP Board
0.001
0.1
1
10
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 SOA, Safe Operation Area
DC
100
DMN6075S
Document number: DS37023 Rev. 6 - 2
4 of 7
May 2018
© Diodes Incorporated
E
C
N
A
T
S
I
S
E
R
L
A
M
R
E
H
T
T
N
E
I
S
N
A
R
T
,
)
t
(
r
DMN6075S
r
(
t
)
,
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
0.0001
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
R
JA
(t) = r(t) * R
JA
= 152°C/W
R
JA
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
1000100
DMN6075S
Document number: DS37023 Rev. 6 - 2
5 of 7
May 2018
© Diodes Incorporated
Package Outline Dimensions
Please see / for the latest version.
All 7°
H
DMN6075S
SOT23
SOT23
Dim Min Max Typ
A
0.37 0.51 0.40
B
1.20 1.40 1.30
C
2.30 2.50 2.40
D
0.89 1.03 0.915
F
0.45 0.60 0.535
G
1.78 2.05 1.83
H
2.80 3.00 2.90
J
0.013 0.10 0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45 0.61 0.55
L1
0.25 0.55 0.40
M
0.085 0.150 0.110
a
0° 8° --
All Dimensions in mm
GAUGE PLANE
0.25
K1
K
J
a
A
M
LL1
C
B
D
F
G
Suggested Pad Layout
Please see / for the latest version.
SOT23
Y
Y1
C
Dimensions Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
X
X1
DMN6075S
Document number: DS37023 Rev. 6 - 2
6 of 7
May 2018
© Diodes Incorporated
IMPORTANT NOTICE
DMN6075S
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
DMN6075S
Document number: DS37023 Rev. 6 - 2
7 of 7
May 2018
© Diodes Incorporated
DMN6075S-7
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