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PROFET
®
BTS 442 E2
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Smart Highside Power Switch
•
Overload protection
•
Current limitation
•
Short-circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
2)
•
Electrostatic discharge (ESD) protection
Features
V
bb(AZ)
63V
V
bb(on)
4.5 ... 42V
R
ON
18
mΩ
I
L(ISO)
21A
I
L(SCr)
70A
TO-220AB/5
5
5
1
Straight leads
1
5
Standard
SMD
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays and discrete circuits
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
R
bb
+ V
bb
3
Voltage
source
V
Logic
Voltage
sensor
Overvoltage
protection
Current
limit
Gate
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
OUT
2
IN
Temperature
sensor
5
ESD
Logic
Load
detection
4
ST
Short circuit
detection
GND
PROFET
Load GND
1
Signal GND
1)
No external components required, reverse load current limited by connected load.
2)
Additional external diode required for charged inductive loads
Semiconductor Group 1 of 14 2003-Oct-01
Pin Symbol Function
1 GND - Logic ground
2 IN I
+
S
BTS 442 E2
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback, low on failure
3 V
bb
4 ST
5 OUT O Output to the load
(Load, L)
Maximum Ratings at T
j
= 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) V
bb
63V
Load dump protection V
LoadDump
= U
A
+ V
s
, U
A
= 13.5 V V
Load dump
3
)
80V
R
I
= 2 Ω, R
L
= 1.1 Ω, t
d
= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4) I
L
self-limitedA
Operating temperature range T
j
-40 ...+150°C
-55 ...+150
Storage temperature range T
stg
Power dissipation (DC) P
tot
167W
Inductive load switch-off energy dissipation,
single pulse T
j
=150 °C: E
AS
2.1J
Electrostatic discharge capability (ESD) V
ESD
2.0kV
(Human Body Model)
Input voltage (DC) V
IN
-0.5 ... +6V
I
IN
Current through input pin (DC) ±5.0mA
±5.0
Current through status pin (DC) I
ST
see internal circuit diagrams
Thermal resistance
chip - case: R
thJC
junction - ambient (free air): R
thJA
SMD version, device on pcb
4)
:
≤ 0.75
≤ 75
≤ tbd
K/W
3)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
Semiconductor Group 2 2003-Oct-01
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